한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)

한국진공학회 (The Korean Vacuum Society)
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In-situ monitoring of oxidation states of vanadium with ambient pressure XPS

  • Kim, Geonhwa (Department of Physics and Photon Science, Gwangju Institute of Science and Technology) ;
  • Yoon, Joonseok (Department of Physics, Yonsei University) ;
  • Yang, Hyukjun (Gwangju Institute of Science and Technology) ;
  • Lim, Hojoon (Gwangju Institute of Science and Technology) ;
  • Lee, Hyungcheol (Department of Physics and Photon Science, Gwangju Institute of Science and Technology) ;
  • Jeong, Changkil (Department of Physics and Photon Science, Gwangju Institute of Science and Technology) ;
  • Yun, Hyungjoong (Division of Material Science Research, Korea Basic Science Institute) ;
  • Jeong, Beomgyun (Advanced Light Source, Lawrence Berkeley National Laboratory) ;
  • Ethan, Crumlin (Advanced Light Source, Lawrence Berkeley National Laboratory) ;
  • Lee, Juhan (Division of Material Science Research, Korea Basic Science Institute) ;
  • Ju, Honglyoul (Department of Physics, Yonsei University) ;
  • Mun, Bongjin Simon (Department of Physics and Photon Science, Gwangju Institute of Science and Technology)
  • 발행 : 2015.08.24
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초록

The evolution of oxidation states of vanadium is monitored with ambient pressure X-ray photoemission spectroscopy. As the pressure of oxygen gas and surface temperature change, the formations of various oxidation states of vanadium are observed on the surface. Under 100mTorr of the oxygen gas pressure and 523K of sample temperature, VO2 and V2O5 are formed on the surface. The temperature-dependent resistance measurement on grown sample shows a clear metal-insulator transition near 350K. In addition, the measurement of Raman spectroscopy displays the structural change from monoclinic to rutile structures across the phase transition temperature.

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