전력전자학회:학술대회논문집 (Proceedings of the KIPE Conference)
- 전력전자학회 2014년도 전력전자학술대회 논문집
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- Pages.89-90
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- 2014
GaN FET를 적용한 CRM PFC의 효율특성에 관한 연구
A study on the Efficiency characteristics of the CRM PFC using GaN FET
- Gil, Young-Man (Dept. of Electronic Eng. Cheongju Univ.) ;
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Choi, Hyun-Su
(Dept. of Electronic Eng. Cheongju Univ.)
;
- Jin, Gi-Seok (Dept. of Electronic Eng. Cheongju Univ.) ;
- Ahn, Tae-Young (Dept. of Electronic Eng. Cheongju Univ.) ;
- Jang, Jin-Haeng (TV power Modular Team, LG Electronics)
- 발행 : 2014.07.01
초록
Recently, one of the switching rectifiers, Power Factor Correction Circuit is often applied in rectification stage to get high efficient conversion of AC-DC SMPS However, it becomes important to select optimal semiconductor switch as well as to design optimal rectifier for achieving higher power conversion. We performed experiments with MOSFET, SiC and GaN FET that are widely used in 600 W Interleaved CRM PFC and include the data in this report. The results are presented for discrete semiconductor and integrated implementations of interleaved CRM PFC.
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