한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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- Pages.462-462
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- 2014
Comparing the Passivation Quality of Ozone and H2O Oxidant of Atomic Layer Deposited Al2O3 by Post-annealing in N2 and Forming Gas Ambients for Passivated Emitter and Rear Cell (PERC)
- Cho, Young Joon (Chungnam National University) ;
- Chang, Hyo Sik (Chungnam National University)
- 발행 : 2014.02.10
초록
The effect of rear passivation for passivated emitter and rear cell (PERC) using ozone and H2O oxidant of atomic layer deposited (ALD) Al2O3 was studied by post-annealing in N2 and forming gas ambients. Rear surface of PERC solar cell was passivated by Al2O3 grown by ALD with ozone and H2O oxidant. Al2O3 grown by ALD with ozone oxidant has been known to have many advantages, such as lower interface defects, low leakage current density. Its passivation quality is better than Al2O3 with H2O. Al2O3 layer with 10 nm and 20 nm thickness was grown at