Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
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- Pages.324-325
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- 2014
Characteristics of InGaAs/GaAs/AlGaAs Double Barrier Quantum Well Infrared Photodetectors
- Park, Min-Su (Center for Opto-electronic Convergence Systems, Korea Institute of Science and Technology) ;
- Kim, Ho-Seong (Center for Opto-electronic Convergence Systems, Korea Institute of Science and Technology) ;
- Yang, Hyeon-Deok (Center for Opto-electronic Convergence Systems, Korea Institute of Science and Technology) ;
- Song, Jin-Dong (Center for Opto-electronic Convergence Systems, Korea Institute of Science and Technology) ;
- Kim, Sang-Hyeok (Center for Opto-electronic Convergence Systems, Korea Institute of Science and Technology) ;
- Yun, Ye-Seul (Center for Opto-electronic Convergence Systems, Korea Institute of Science and Technology) ;
- Choe, Won-Jun (Center for Opto-electronic Convergence Systems, Korea Institute of Science and Technology)
- Published : 2014.02.10
Abstract
Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area :