Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
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- Pages.188.1-188.1
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- 2014
SIMS Study on the Diffusion of Al in Si and Si QD Layer by Heat Treatment
- Jang, Jong Shik (Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS)) ;
- Kang, Hee Jae (Department of Physics, Chungbuk National University (CBNU)) ;
- Kim, An Soon (Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS)) ;
- Baek, Hyun Jeong (Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS)) ;
- Kim, Tae Woon (Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS)) ;
- Hong, Songwoung (Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS)) ;
- Kim, Kyung Joong (Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS))
- Published : 2014.02.10
Abstract
Aluminum is widely used as a material for electrode on silicon based devices. Especially, aluminum films are used as backside and front-side electrodes in silicon quantum dot (QD) solar cells. In this point, the diffusion of aluminum is very important for the enhancement of power conversion efficiency by improvement of contact property. Aluminum was deposited on a Si (100) wafer and a Si QD layer by ion beam sputter system with a DC ion gun. The Si QD layer was fabricated by