한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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- Pages.653-653
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- 2013
ITO Extended Gate Reduced Graphene Oxide Field Effect Transistor For Proton Sensing Application
- Truong, Thuy Kieu (School of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
- Nguyen, T.N.T. (School of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
- Trung, Tran Quang (School of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
- Son, Il Yung (School of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
- Kim, Duck Jin (Samsung Advanced Institute for Health Sciences and Technology (SAIHST), Sungkyunkwan University) ;
- Jung, Jin Heak (SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University) ;
- Lee, N.E. (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
- 발행 : 2013.02.18
초록
In this study, ITO extended gate reduced graphene oxide field effect transistor (rGO FET) was demonstrated as a transducer for a proton sensing application. In this structure, the sensing area is isolated from the active area of the device. Therefore, it is easy to deposit or modify the sensing area without affecting on the device performance. In this case, the ITO extended gate was used as a gate electrode as well as a proton sensing material. The proton sensing properties based on the rGO FET transducer were analyzed. The rGO FET device showed a high stability in the air ambient with a TTC encapsulation layer for months. The device showed an ambipolar characteristic with the Dirac point shift with varying the pH solutions. The sensing characteristics have offered the potential for the ion sensing application.
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