EDISON SW 활용 경진대회 논문집 (Proceeding of EDISON Challenge)
- 제2회(2013년)
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- Pages.260-263
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- 2013
Characterization of SWCNT Field Effect Transistor via Edison Simulation
- Piao, Mingxing (School of Electrical Engineering, Korea University) ;
- Lee, Sang-Jin (School of Electrical Engineering, Korea University) ;
- Na, In-Yeob (School of Electrical Engineering, Korea University)
- 발행 : 2013.04.17
초록
A semiconducting single-walled carbon nanotube (SWCNT) field-effect transistor (FET) in a top-gate model was constructed. The effect of different high-
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