Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2012.10a
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- Pages.283-284
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- 2012
Double-Gate MOSFET Filled with Dielectric to Reduce Sub-threshold Leakage Current
Abstract
In this work, a special technique called dielectric filling was carried out in order to reduce sub-threshold leakage current inside double-gated n-channel MOSFET. This calibration was done by using SILVACO Atlas(TCAD), and the result showed quite a good performance compared to the conventional double-gate MOSFET.