Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Double-Gate MOSFET Filled with Dielectric to Reduce Sub-threshold Leakage Current

  • Hur, Jae (Korea Advanced Institute of Technology(KAIST))
  • Published : 2012.10.26
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Abstract

In this work, a special technique called dielectric filling was carried out in order to reduce sub-threshold leakage current inside double-gated n-channel MOSFET. This calibration was done by using SILVACO Atlas(TCAD), and the result showed quite a good performance compared to the conventional double-gate MOSFET.

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