Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2012.05a
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- Pages.709-712
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- 2012
Analysis on I-V of DGMOSFET for Device Parameters
소자파라미터에 대한 DGMOSFET의 전류-전압 분석
- Han, Ji-Hyung (Department of Electronic Eng., Kunsan National University) ;
- Jung, Hak-Kee (Department of Electronic Eng., Kunsan National University) ;
- Jeong, Dong-Soo (Department of Electronic Eng., Kunsan National University) ;
- Lee, Jong-In (Department of Electronic Eng., Kunsan National University)
- Published : 2012.05.26
Abstract
In this paper, current-voltage have been considered for DGMOSFET, using the analytical model. The Possion equation is used to analytical. Threshold voltage is defined as top gate voltage when drain current is
본 연구에서는 분석학적 모델을 이용하여 DGMOSFET의 전류-전압을 고찰하고자 한다. 분석학적 모델을 유도하기 위하여 포아송 방정식을 이용하였다. 드레인 전류가
Keywords