Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2012.08a
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- Pages.307-307
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- 2012
Effect of Al Doping Concentration on Resistance Switching Behavior of Sputtered Al-doped MgOx Films
- Published : 2012.08.20
Abstract
In this study, we investigated that the resistance switching characteristics of Al-doped MgOx films with increasing Al doping concentration and increasing film thickness. The Al-doped MgOx based ReRAM devices with a TiN/Al-doped MgOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 5 nm, 10 nm, and 15 nm thick Al-doped MgOx films were deposited by reactive dc magnetron co-sputtering at