Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2012.02a
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- Pages.550-551
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- 2012
Giant Piezoelectric Nanocomposites Integrated in Physically Responsive Field-effect Transistors for Pressure Sensing Applications
- Tien, Nguyen Thanh (School of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
- Trung, Tran Quang (School of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
- Kim, Do-Il (School of Advanced Materials Science & Engineering, Sungkyunkwan University) ;
- Lee, Nae-Eung (School of Advanced Materials Science & Engineering, Sungkyunkwan University)
- Published : 2012.02.08
Abstract
Physically responsive field-effect transistors (physi-FETs), which are sensitive to physical stimuli, have been studied for decades. However, the primary issue of separating responses by sensing materials from interferences by other subcomponents in a FET transducer under global physical stimuli has not been completely resolved. Recent challenges of structural design and employing smart materials with a large electro-physical coupling effect for flexible physi-FETs still remain. In this article, we propose directly integrating nanocomposites of barium titanate (BT) nanoparticles (NPs) and highly crystalline poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) as gate dielectrics into flexible organic FETs to precisely separate and quantify tiny variations of remnant polarization caused by mechanical stimuli. Investigations under static stimuli resulted in first-reported giant-positive piezoelectric coefficients of d33 up to 960 pC/N, presumably due to significant contribution of the intrinsic piezoelectricity of BT NPs and P(VDF-TrFE) crystallites. This approach provides a general research direction, and not limited to physic-FETs.