Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2011.07a
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- Pages.1501-1502
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- 2011
A Study on Doped Poly of 8" process for Trench Power MOSFET Application
8" Trench Power MOSFET 응용을 위한 Doped Poly 공정연구
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Yang, Chang-Heon
(Dept. of Nano Engineering, Dong-A University)
;
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Kim, Gwon-Je
(Dept. of Nano Engineering, Dong-A University)
;
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Kwon, Young-Soo
(Dept. of Nano Engineering, Dong-A University)
;
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Shin, Hoon-Kyu
(Dept. of Nano Engineering, Dong-A University)
- Published : 2011.07.20
Abstract
In this paper, an investigation of the 8" process for Trench Power MOSFET Application and Trench MOSFETs and its impact on device performance is presented. Layout dimensions of trench power MOSFETs have been continuously reduced in order to decrease the specific on-resistance, maintaining equal vertical dimensions. We discuss experimental results for devices with a pitch size down fabricated with an unconventional gate trench topology and a simplified manufacturing scheme. The fabricated Trench MOSFETs are observed the trench gate oxidation by SEM.
Keywords