Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2011.07a
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- Pages.1453-1454
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- 2011
Variation of electrical properties in solution processed SiInZnO thin film transistors
용액공정을 이용하여 제작된 SiInZnO 박막 트랜지스터의 전기적 특성 변화
- Park, Ki-Ho (Korea Institute of Science and Technology) ;
- Choi, Jun-Young (Korea Institute of Science and Technology) ;
- Chun, Yoon-Soo (Korea Institute of Science and Technology) ;
- Ju, Byeong-Kwon (Korea University) ;
- Lee, Sang-Yeol (Korea Institute of Science and Technology)
- Published : 2011.07.20
Abstract
We have investigated the effect of silicon contents (0~0.4 molar ratios) on the performance of solution processed silicon-indium-zinc oxide (SIZO) thin-film transistors (TFTs). Despites its solution processed channel layer, low annealed temperature below
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