Iodine Doping of Pentacene and its Electrical Properties

  • Rahim, Abdur (School of Advanced Material Engineering, Kookmin University) ;
  • Lee, Young-Kyu (School of Advanced Material Engineering, Kookmin University) ;
  • Lee, Chi-Young (School of Advanced Material Engineering, Kookmin University) ;
  • Lee, Jae-Gab (School of Advanced Material Engineering, Kookmin University)
  • Published : 2011.05.27

Abstract

Organic thin film transistors (OTFTs) have been attracting considerable attention because of their potential use in low-cost, large area, electronic devices such as flexible displays, biochemical sensors, and smart cards. In past several years, gold/pentacene has been frequently used in OTFTs because of the high mobility of pentacene and the high work function of gold. To improve the performance of the OTFTs contact area doping of pentacene with p-doping materials are well known. In this work we demonstrated selectively contact area doping of pentacene with Iodine vapor. For effective doping elevated pentacene layer under the source-drain area was deposited and exposed to Iodine vapor. We got better electrical performance for elevated pentacene structure rather than planer structure with relatively high field-effect mobility.

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