한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2010년도 제39회 하계학술대회 초록집
- /
- Pages.207-207
- /
- 2010
ZnO films grown on GaN/sapphire substrates by pulsed laser deposition
- Suh, Joo-Young (Quantum-Function Research Laboratory and Department of Physics, Hanyang University) ;
- Song, Hoo-Young (Quantum-Function Research Laboratory and Department of Physics, Hanyang University) ;
- Shin, Myoung-Jun (Quantum-Function Research Laboratory and Department of Physics, Hanyang University) ;
- Park, Young-Jin (Quantum-Function Research Laboratory and Department of Physics, Hanyang University) ;
- Kim, Eun-Kyu (Quantum-Function Research Laboratory and Department of Physics, Hanyang University)
- 발행 : 2010.08.18
초록
Both ZnO and GaN have excellent physical properties in optoelectronic devices such as blue light emitting diode (LED), blue laser diode (LD), and ultra-violet (UV) detector. The ZnO/GaN heterostructure, which has a potential to achieve the cost efficient LED technology, has been fabricated by using radio frequency (RF) sputtering, pyrolysis, metal organic chemical vapor deposition (MOCVD), direct current (DC) arc plasmatron, and pulsed laser deposition (PLD) methods. Among them, the PLD system has a benefit to control the composition ratio of the grown film from the mixture target. A 500-nm-thick ZnO film was grown by PLD technique on c-plane GaN/sapphire substrates. The post annealing process was executed at some varied temperature between from
키워드