Proceedings of the Korean Magnestics Society Conference (한국자기학회:학술대회 개요집)
- 2010.06a
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- Pages.96-96
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- 2010
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- 2233-9485(pISSN)
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- 2233-9574(eISSN)
Single Crystalline CoFe/MgO Tunnel Contact on Nondegenerate Ge with a Proper Resistance-Area Product for Efficient Spin Injection and Detection
- Jeon, Kun-Rok (Department of Physics and Center for Nanospinics of Spintronic Materials, Korea Advanced Institute of Science and Technology (KAIST)) ;
- Min, Byoung-Chul (Center for Spintronics Research, Korea Institute of Science and Technology (KIST)) ;
- Lee, Hun-Sung (Department of Physics and Center for Nanospinics of Spintronic Materials, Korea Advanced Institute of Science and Technology (KAIST)) ;
- Shin, Il-Jae (Center for Spintronics Research, Korea Institute of Science and Technology (KIST)) ;
- Park, Chang-Yup (Department of Physics and Center for Nanospinics of Spintronic Materials, Korea Advanced Institute of Science and Technology (KAIST)) ;
- Shin, Sung-Chul (Department of Physics and Center for Nanospinics of Spintronic Materials, Korea Advanced Institute of Science and Technology (KAIST))
- Published : 2010.06.10
Abstract
We report the proper resistance-area products in the single crystalline bcc CoFe/MgO tunnel contact on nondegenerate n-Ge desirable for efficient spin injection and detection at room temperature. The electric properties of the crystalline CoFe(5 nm)/MgO(1.5,2.0,2.5 nm)/n-Ge(001) tunnel contacts have been investigated by I-V-T and C-V measurements. Interestingly, the tunnel contact with the 2-nm MgO exhibits the ohmic behavior with low resistance-area products, satisfying the theoretical conditions required for significant spin injection and detection. This result is ascribed to the presence of MgO layer between CoFe and n-Ge, enhancing the Schottky pinning parameter as well as shifting the charge neutrality level.
Keywords
- Nondegenerate Ge;
- Crystalline CoFe/MgO tunnel conatct;
- Resistance-area product;
- Tunnel spin polarization;
- Spin diffusion length;
- Schottky pinning parameter;
- Charge neutrality level;
- Fermi level