한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2010년도 하계학술대회 논문집
- /
- Pages.344-344
- /
- 2010
$SiO_2/HfO_2/Al_2O_3$ (OHA) 터널 장벽의 열처리 조건에 따른 전기적 특성
Electrical characteristic of $SiO_2/HfO_2/Al_2O_3$ (OHA) as engineered tunnel barrier with various heat treatment condition
- Son, Jung-Woo (Kwangwoon University) ;
- Cho, Won-Ju (Kwangwoon University)
- 발행 : 2010.06.16
초록
A capacitor with engineered tunnel barrier composed of High-k materials has been fabricated. Variable oxide thickness (VARIOT) barrier consisting of thin SiO2/HfO2/Al2O3 (2/1/3 nm) dielectric layers were used as engineered tunneling barrier. We studied the electrical characteristics of multi stacked tunnel layers for various RTA (Rapid Thermal Anneal) and FGA (Forming Gas Anneal) temperature.