한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2009년도 제38회 동계학술대회 초록집
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- Pages.140-140
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- 2010
Reverse annealing of boron doped polycrystalline silicon
- Hong, Won-Eui (Department of Materials Science and Engineering, Hongik University) ;
- Ro, Jae-Sang (Department of Materials Science and Engineering, Hongik University)
- 발행 : 2010.02.17
초록
Non-mass analyzed ion shower doping (ISD) technique with a bucket-type ion source or mass-analyzed ion implantation with a ribbon beam-type has been used for source/drain doping, for LDD (lightly-doped-drain) formation, and for channel doping in fabrication of low-temperature poly-Si thin-film transistors (LTPS-TFT's). We reported an abnormal activation behavior in boron doped poly-Si where reverse annealing, the loss of electrically active boron concentration, was found in the temperature ranges between
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