Effects of $CH_2F_2$ and $H_2$ flow rates on process window for infinite etch selectivity of silicon nitride to PVD a-C in dual-frequency capacitively coupled plasmas

• 김진성 (성균관대학교) ;
• 권봉수 (성균관대학교) ;
• 안정호 (성균관대학교) ;
• 박영록 (성균관대학교) ;
• 이내응 (성균관대학교)

• Kim, Jin-Seong ;
• Gwon, Bong-Su ;
• An, Jeong-Ho ;
• Park, Yeong-Rok ;
• Lee, Nae-Eung

• 발행 : 2009.02.11

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