한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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- Pages.3-6
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- 2009
3C-SiC 버퍼층이 Si 기판위에 스퍼터링된 AlN 막의 특성에 미치는 영향
Effect of 3C-SiC buffer layer on the characteristics of AlN films supttered on Si Substrates
- Ryu, Kyeong-Il (University of Ulsan) ;
- Chung, Gwiy-Sang (University of Ulsan)
- 발행 : 2009.04.03
초록
Aluminum nitride (AIN) thin films were deposited on a polycrystalline 3C-SiC intermediate layer by a pulsed reactive magnetron sputtering system. Characteristics of the AIN/SiC heterostructures were investigated by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FT-IR). The columnar structure of AIN thin films was observed by FE-SEM. The surface roughness of AlN films on the 3C-SiC buffer layer was measured using AFM. The XRD pattern of AlN films on SiC buffer layers was highly oriented at (002). Full width at half maximum (FWHM) of the rocking curve near (002) reflections was