한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2009년도 하계학술대회 논문집
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- Pages.487-487
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- 2009
DSS에서 $CeO_2$ 연마제의 첨가량과 분산시간이 TEOS 막에 미치는 특성연구
A Study on the effect of TEOS film by Dispel8ion Time and Content of $CeO_2$ Abrasive
- 서용진 (대불대학교 융합기술학부) ;
- 한상준 (대불대학교 나노정보소재연구소) ;
- 박성우 (대불대학교 나노정보소재연구소) ;
- 이영균 (부산대학교 기계공학부) ;
- 이성일 (대불대학교 나노정보소재연구소)
- Seo, Yong-Jin (School of Fusion Technology, Daebul Univ.) ;
- Han, Sang-Jun (Nano Information Materials & Devices Lab., Deabul. Univ.) ;
- Park, Sung-Woo (Nano Information Materials & Devices Lab., Deabul. Univ.) ;
- Lee, Young-Kyun (School of Mechanical Engineering, Pusan National Univ.) ;
- Lee, Sung-Il (Nano Information Materials & Devices Lab., Deabul. Univ.)
- 발행 : 2009.06.18
초록
One of the critical consumables in chemical mechanical polishing (CMP) is a specialized solution or slurry, which typically contains both abrasives and chemicals acting together to planarize films. In single abrasive slurry (SAS), the solid phase consists of only one type of abrasive particle. On the other hand, mixed abrasive slurry (MAS) consists of a mixture of at least two types of abrasive particles. In this paper, we have studied the CMP characteristics of mixed abrasive slurry (MAS) retreated by adding of
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