비정질 IZTO기반의 투명 박막 트렌지스터 특성

Characteristics of amorphous IZTO-based transparent thin film transistors

  • 신한재 (구미전자정보기술원 모바일디스플레이공동연구센터) ;
  • 이근영 (금오공과대학교 정보나노소재공학과) ;
  • 한동철 (구미전자정보기술원 모바일디스플레이공동연구센터) ;
  • 이도경 (금오공과대학교 정보나노소재공학과)
  • Shin, Han-Jae (Mobile Display Research Center, Gumi Electronics & Information Technology Research Institute) ;
  • Lee, Keun-Young (Department of Information & Nano Materials Engineering, Kumoh National of institute technology) ;
  • Han, Dong-Cheul (Mobile Display Research Center, Gumi Electronics & Information Technology Research Institute) ;
  • Lee, Do-Kyung (Department of Information & Nano Materials Engineering, Kumoh National of institute technology)
  • 발행 : 2009.06.18

초록

Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.

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