Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.06a
- /
- Pages.99-100
- /
- 2009
Memory characteristics of SGOI (Silicon-Germanium-On-Insulator) 1T-DRAM with various Ge mole fractions
Ge 농도에 따른 SGOI (Silicon-Germanium-On-Insulator) 1T-DRAM의 메모리 특성
- Oh, Jun-Seok (Kwangwoon Univ) ;
- Kim, Min-Soo (Kwangwoon Univ) ;
- Jung, Jong-Wan (Sejong Univ.) ;
- Lee, Young-Hie (Kwangwoon Univ) ;
- Chung, Hong-Bay (Kwangwoon Univ) ;
- Cho, Won-Ju (Kwangwoon Univ)
- 오준석 (광운대학교 전자재료공학과) ;
- 김민수 (광운대학교 전자재료공학과) ;
- 정종완 (세종대학교 나노신소재공학과) ;
- 이영희 (광운대학교 전자재료공학과) ;
- 정홍배 (광운대학교 전자재료공학과) ;
- 조현주 (광운대학교 전자재료공학과)
- Published : 2009.06.18
Abstract
SGOI 1T-DRAM cells with various Ge mole fractions were fabricated and compared to the SOI 1T-DRAM cell. SGOI 1T-DRAM cells have a higher leakage current than SOI 1T-DRAM cell at subthreshold region. The leakage current due to crystalline defects and interface states at Si/SiGe increased with Ge mole. This phenomenon causes sensing margin and the retention time of SGOI 1T-DRAMs decreased with increase of Ge mole fraction.