Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2009.06a
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- Pages.67-68
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- 2009
Electrolyte Mechanizm Study of Amorphous Ge-Se Materials for Memory Application
메모리 응용을 위한 비정질 Ge-Se 재료의 전해질 메카니즘 연구
- Nam, Ki-Hyun (Kwangwoon Univ.) ;
- Chung, Hong-Bay (Kwangwoon Univ.)
- Published : 2009.06.18
Abstract
In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about