한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2009년도 하계학술대회 논문집
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- Pages.64-64
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- 2009
4H-SiC 표면에서 AFM의 산화 패턴 제작
AFM fabrication of oxide patterns on 4H-SiC surface
- Jo, Yeong-Deuk (Kwangwoon Univ.) ;
- Bahng, Wook (Korea Electrotechnology Research Institute (KERI)) ;
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Kim, Sang-Cheol
(Korea Electrotechnology Research Institute (KERI)) ;
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Kim, Nam-Kyun
(Korea Electrotechnology Research Institute (KERI)) ;
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Koo, Sang-Mo
(Kwangwoon Univ.)
- 발행 : 2009.06.18
초록
Atomic force microscopy (AFM) fabrication of oxide patterns is an attractive technique for nanoscale patterns and related device structures, SiC exhibits good performance in high-power, high-frequency, and high-temperature conditions that is comparable to the performance of Si. The AFM fabrication of oxide patterns on SiC is important for electronic applications. However, there has not been much reported investigations on oxidation of SiC using AFM. We achieved the local oxidation of 4H-SiC using the high loading force of ~100 nN, although the oxidation of SiC is generally difficult mainly due to the physical hardness and chemical inactivity. All the experiments were performed using atomic force microscopy (S.I.S. GmbH, Germany) with a Pt/Ir-coated Si tip at ~40% humidity and room temperature. The spring constant and resonance frequency of the tip were around ~3 N/m and ~70 kHz. We fabricated oxide patterns on n-type 4H-SiC (