한국정보디스플레이학회:학술대회논문집
- 2009.10a
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- Pages.700-702
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- 2009
Fabrication of epitaxial ZnO layers on MOCVD-ZnO/(01-12) sapphire by chemical vapor transport
- Hong, Sang-Hwui (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University) ;
- Kato, Kenichi (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University) ;
- Mimura, Kouji (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University) ;
- Uchikoshi, Masahito (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University) ;
- Abe, Seishi (The Research Institute for Electric and Magnetic Materials) ;
- Isshiki, Minoru (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University)
- Published : 2009.10.12
Abstract
We present the epitaxial growth of high-quality ZnO layers by chemical vapor transport (CVT) technique on (01-12) sapphire with a ZnO buffer layer growth by metal-organic chemical vapor deposition (MOCVD). The surface of the grown ZnO epitaxial layers has atomically flats and the RMS is 0.11 nm. PL spectrum of as-grown samples exhibits two emissions originated by interactions between photon and free excitons.