한국정보디스플레이학회:학술대회논문집
- 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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- Pages.378-381
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- 2009
LTPS produced by JIC (Joule-heating Induced Crystallization) for AMOLED TFT backplanes
- Hong, Won-Eui (Department of Materials Science and Engineering, Hongik University) ;
- Lee, Seog-Young (EnSilTech Corporation) ;
- Chung, Jang-Kyun (EnSilTech Corporation) ;
- Lee, Joo-Yeol (EnSilTech Corporation) ;
- Ro, Jae-Sang (Department of Materials Science and Engineering, Hongik University) ;
- Kim, Dong-Hyun (Department of Mechanical and System Design Engineering, Hongik University) ;
- Park, Seung-Ho (Department of Mechanical and System Design Engineering, Hongik University) ;
- Kim, Cheol-Su (Samsung Mobile Display Co.) ;
- Lee, Won-Pil (Samsung Mobile Display Co.) ;
- Kim, Hye-Dong (Samsung Mobile Display Co.)
- 발행 : 2009.10.12
초록
As a Joule-heat source, a conductive Mo layer was used to crystallize amorphous silicon for AMOLED backplanes. This Joule-heating induced crystallization (JIC) process could produce poly-Si having a grain size ranging from tens of nanometers to greater than several micrometers. Here, the blanket (single-shot whole-plane) crystallization could be achieved on the