Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Effects of oxygen and hydrogen additives on electrical, optical, and structural properties of ZnO films

수소 및 산소 첨가에 따른 산화아연막의 전기적, 광학적, 구조적 물성

  • Bang, Jung-Hwan (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Kim, Won (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Uhm, Hyun-Seok (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University) ;
  • Park, Jin-Seok (Dept. of Electronic, Electrical, Control and Instrumentation Engineering, Hanyang University)
  • 방정환 (한양대학교 전자전기제어계측공학과) ;
  • 김원 (한양대학교 전자전기제어계측공학과) ;
  • 엄현석 (한양대학교 전자전기제어계측공학과) ;
  • 박진석 (한양대학교 전자전기제어계측공학과)
  • Published : 2009.07.14
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Abstract

Effects of hydrogen and oxygen additives on structural, optical, and electrical properties of ZnO films were extensively examined. ZnO films were deposited using RF sputtering by varying the gas mixing ratio of $H_2$ and $O_2$. Optical transmittances at visible region, electrical resistivities, and micro-structures of ZnO films were characterized in terms of the kind and amount of additive gases. It was observed that the material properties of ZnO films required for their use in transparent thin film transistors, such as approximately $10^3{\Omega}cm$ in resistivity and higher than 85% in transmittance, can be achieved by controlling the gas mixing ratio of $O_2/H_2$ (sccm) in the range of 2/2~2/8.

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