Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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GaAs 기반 IPD(Integrated Passive Device)를 이용한 Power Divider

  • 유찬세 (서울대학교 전기컴퓨터공학부) ;
  • 송생섭 (서울대학교 전기컴퓨터공학부) ;
  • 정성훈 ((주)나노ENS) ;
  • 이우성 (전자부품연구원 전자소재패키징연구센타) ;
  • 김준철 (전자부품연구원 전자소재패키징연구센타) ;
  • 강남기 (전자부품연구원 전자소재패키징연구센타) ;
  • 서광석 (서울대학교 전기컴퓨터공학부)
  • Published : 2008.06.18
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Abstract

Nowadays, the research on the system integration using various technologies, like MCM-C, MCM-L and MCM-D. Especially, MCM-D technology is suitable for mmwave application due to its high resolution of patterning and thermal property similar to that of semiconductor devices. In this work, integrated passive devices like inductor, capacitor and resistor are evaluated on the GaAs substrate and their characteristics are examined. And finally, the Wilkinson power divider using lumped IPD are evaluated on GaAs substrate and it shows low insertion loss below 0.5 dB and the isolation over 15 dB.

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