대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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CMOS 0.18um 공정을 이용한 3.1-10.6 GHz UWB LNA 설계

3-10.6GHz UWB LNA Design in CMOS 0.18um Process

  • 정하용 (광운대학교 전자통신공학과) ;
  • 황인용 (광운대학교 전자통신공학과) ;
  • 박찬형 (광운대학교 전자통신공학과)
  • Jung, Ha-Yong (Department of Electronics and Communications Engineering Kwangwoon University) ;
  • Hwang, In-Yong (Department of Electronics and Communications Engineering Kwangwoon University) ;
  • Park, Chan-Hyeong (Department of Electronics and Communications Engineering Kwangwoon University)
  • 발행 : 2008.06.18
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초록

This paper presents an ultra-wideband (UWB) CMOS low noise amplifier (LNA) topology that operates in 3.1-10.6GHz band. The common gate structure provides wideband input matching and flattens the passband gain. The proposed UWB amplifier is implemented in 0.18 um CMOS technology for lower band operation mode. Simulation shows a minimum NF of 2.35 dB, a power gain of $18.3{\sim}20\;dB$, better than -10 dB of input and output matching, while consuming 16.4 mW.

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