대한전자공학회:학술대회논문집 (Proceedings of the IEEK Conference)

대한전자공학회 (The Institute of Electronics and Information Engineers)
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Reduced Swing 방식과 Low-Vt 고전압 소자를 이용한 고속 레벨시프터 설계

A Design of High-Speed Level-Shifter using Reduced Swing and Low-Vt High-Voltage Devices

  • Seo, Hae-Jun (School of Electrical and Computer Engineering, Chungbuk University) ;
  • Kim, Young-Woon (School of Electrical and Computer Engineering, Chungbuk University) ;
  • Ryu, Gi-Ju (Korea Foundation of Polytechnic Colleges) ;
  • Ahn, Jong-Bok (Korea Foundation of Polytechnic Colleges) ;
  • Cho, Tae-Won (School of Electrical and Computer Engineering, Chungbuk University)
  • 발행 : 2008.06.18
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초록

This paper proposes a new high-speed level shifter using a special high voltage device with low threshold voltage. Also, novel low voltage swing method is proposed. The high voltage device is a standard LDMOS(Laterally Diffused MOS) device in a $0.18{\mu}m$ CMOS process without adding extra mask or process step to realize it. A level shifter uses 5V LDMOSs as voltage clamps to protect 1.8V NMOS switches from high voltage stress the gate oxide. Also, level-up transition from 1.8V to 5V takes only 1.5ns in time. These circuits do not consume static DC power, therefore they are very suitable for low-power and high-speed interfaces in the deep sub-quarter-micron CMOS technologies.

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