Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2008.04a
- /
- Pages.39-40
- /
- 2008
AMOLED Panel Using Transparent Bottom Gate IGZO TFT
Bottom Gate IGZO 박막트랜지스터를 이용한 투명 AMOLED 패널 제작
- Cho, D.H. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
- Yang, S.H. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
- Byun, C.W. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
- Shin, J.H. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
- Lee, J.I. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
- Park, E.S. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
- Kwon, O.S. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
- Hwang, C.S. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
- Chu, H.Y. (Transparent Electronics Team, Electronics and Communications Research Institute) ;
- Cho, K.I. (Transparent Electronics Team, Electronics and Communications Research Institute)
- 조두희 (한국전자통신연구원 투명전자소자팀) ;
- 양신혁 (한국전자통신연구원 투명전자소자팀) ;
- 변춘원 (한국전자통신연구원 투명전자소자팀) ;
- 신재헌 (한국전자통신연구원 투명전자소자팀) ;
- 이정익 (한국전자통신연구원 투명전자소자팀) ;
- 박은숙 (한국전자통신연구원 투명전자소자팀) ;
- 권오상 (한국전자통신연구원 투명전자소자팀) ;
- 황치선 (한국전자통신연구원 투명전자소자팀) ;
- 추혜용 (한국전자통신연구원 투명전자소자팀) ;
- 조경익 (한국전자통신연구원 투명전자소자팀)
- Published : 2008.04.25
Abstract
We have examined post-annealing and passivation for the transparent bottom gate IGZO TFT having an inverse co-planar structure. The oxygen-vacuum two step annealing enhanced the field effect mobility up to 18