Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Photoluminescence property of Al,N-codoped p-type ZnO films by dc magnetron sputtering

  • Jin, Hu-Jie (Wonkwang Univ. WRISS, School of Electrical Electronic and Information Engineering) ;
  • Liu, Yan-Yan (Wonkwang Univ. WRISS, School of Electrical Electronic and Information Engineering) ;
  • Park, Bok-Kee (Wonkwang Univ. WRISS, School of Electrical Electronic and Information Engineering) ;
  • Park, Choon-Bae (Wonkwang Univ. WRISS, School of Electrical Electronic and Information Engineering)
  • Published : 2008.06.19
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Abstract

In this study, high quality (Al,N)-codoped p-type ZnO thin films were obtained by DC magnetron sputtering. The film on buffer layer grown in 80% $N_2$ ambient shows highest hole concentration of $2.93\times10^{17}cm^{-3}$. The films show hole concentration in the range of $1.5\times10^{15}$ to $2.93\times10^{17}cm^{-3}$, resistivity of 131.2 to 2.864 $\Omega$cm, mobility of 3.99 to 31.6 $cm^2V^{-1}s^{-1}$. The films on Si show easier p-doping in ZnO than those on buffer layer. The film on Si shows the highest quality of optical photoluminescence (PL) characteristics. The donor energy level $(E_d)$ of (Al,N)-codoped ZnO films is about 50 meV and acceptor energy level $(E_a)$ is in the range of 63 to 71 meV. It will help to improve p-type ZnO films.

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