Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Influence of Annealing treatment on the properties of B doped ZnO:Al transparent conduction films

열처리 효과에 따른 AZOB 투명 전도막의 특성

  • Lee, Jong-Hwan (Department of Information and Communication Engineering) ;
  • Lee, Kyu-Il (Department of Information and Communication Engineering) ;
  • Yu, Hyun-Kyu (Department of Information and Communication Engineering) ;
  • Lee, Tae-Yong (Department of Information and Communication Engineering) ;
  • Kang, Hyun-Il (Department of Information and Communication Engineering) ;
  • Jeong, Kyu-Won (CEI of KEPCO (Central Education Institute of Korea Electric Power Company)) ;
  • Song, Joon-Tae (SungKyunKwan Univ.)
  • Published : 2008.06.19
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Abstract

Boron doped ZnO:Al(AZOB) thin films were prepared on glass substrates by dc magnetron sputtering. Influence of the annealing treatment on the electrical and optical properties of AZOB thin films were investigated. The lowest resistivity of $1.6\times10^{-3}\Omega$-cm was obtained at an annealing temperature of $400^{\circ}C$. The average transmittance of the films is over 80% in the visible range. It was also shown that by introducing boron impurity into AZO system improve the uniformity, the resistivity, and thermal stability of ZnO-based conducting thin films.

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