한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

$SiO_2/HfO_2$와 $Al_2O_3/HfO_2$를 이용한 Engineered Tunnel Barrier의 전기적 특성

Electrical Characteristics of Engineered Tunnel Barrier using $SiO_2/HfO_2$ and $Al_2O_3/HfO_2$ stacks

  • 김관수 (광운대학교 전자재료공학과) ;
  • 박군호 (광운대학교 전자재료공학과) ;
  • 윤종원 (광운대학교 전자재료공학과) ;
  • 정종완 (세종대학교 나노신소재공학부) ;
  • 조원주 (광운대학교 전자재료공학과)
  • Kim, Kwan-Su (Department of Electronic materials engineering, Kwangwoon Univ.) ;
  • Park, Goon-Ho (Department of Electronic materials engineering, Kwangwoon Univ.) ;
  • Yoon, Jong-Won (Department of Electronic materials engineering, Kwangwoon Univ.) ;
  • Jung, Jong-Wan (Department of Nano Science and Technology, Sejong Univ.) ;
  • Cho, Won-Ju (Department of Electronic materials engineering, Kwangwoon Univ.)
  • 발행 : 2008.06.19
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초록

The electrical characteristics of VARIOT (variable oxide thickness) with various $HfO_2$ thicknesses on thin $SiO_2$ or $Al_2O_3$ layer were investigated. Especially, the charge trapping characteristics of $HfO_2$ layer were intensively studied. The thin $HfO_2$ layer has small charge trapping characteristics while the thick $HfO_2$ layer has large memory window. Therefore, the $HfO_2$ layer is superior material and can be applied to charge storage as well as tunneling barrier of the non-volatile memory applications.

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