Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Preparation of p-type transparent semiconductor $SrCu_2O_2$ thin film by RF magnetron sputtering

RF 마그네트론 스퍼터링에 의한 p형 투명 반도체 $SrCu_2O_2$ 박막의 제조

  • Kim, Sei-Ki (Korea Institute of Ceramic Engineering & Technology, Electronic materials lab.) ;
  • Seok, Hye-Won (Korea Institute of Ceramic Engineering & Technology, Electronic materials lab.) ;
  • Lee, Mi-Jae (Korea Institute of Ceramic Engineering & Technology, Electronic materials lab.) ;
  • Choi, Byung-Hyun (Korea Institute of Ceramic Engineering & Technology, Electronic materials lab.) ;
  • Jeong, Won-Hee (LG micron Co., Ltd., R&D Center)
  • 김세기 (요업기술원 전자소재팀) ;
  • 석혜원 (요업기술원 전자소재팀) ;
  • 이미재 (요업기술원 전자소재팀) ;
  • 최병현 (요업기술원 전자소재팀) ;
  • 정원희 (LG마이크론(주) LG연구소 LG소재부품연구소)
  • Published : 2008.06.19
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Abstract

P-type transparent semiconductor $SrCu_2O_2$ thin films have been prepared by RF sputtering using low-alkali glass for LCD and quartz as substrates. Single phase of $SrCu_2O_2$ powder was obtained by heating a stoichiometric mixture of CuO and $SrCO_3$ at 1223K for 96h under N2 gas flow, and target was fabricated at 1243K for 24h. Room temperature conductivity of the sintered body was about 0.02S/cm, and the activation energy in the temperature range of $-50^{\circ}C$~RT and RT~$150^{\circ}C$ were 0.18eV, 0.07eV, respectively. Effects of deposition pressure and post-annealing temperature on the electrical and optical properties of the obtained thin film have been investigated.

Keywords