PLD법으로 증착된 n-ZnO:In/p-Si(111) 이종접합구조의 특성연구

The study of the characteristic of n-ZnO:In/p-Si(111) heterostructure using Pulsed Laser Deposition

  • Jang, B.L. (Department of Semiconductor Physics, Korea Maritime University) ;
  • Lee, J.Y. (Department of Semiconductor Physics, Korea Maritime University) ;
  • Lee, J.H. (Department of Semiconductor Physics, Korea Maritime University) ;
  • Kim, J.J. (Department of Semiconductor Physics, Korea Maritime University) ;
  • Kim, H.S. (Department of Semiconductor Physics, Korea Maritime University) ;
  • Lee, D.W. (Department of Information Material Engineering, Dong-Eui University) ;
  • Lee, W.J. (Department of Information Material Engineering, Dong-Eui University) ;
  • Cho, H.K. (School of Material Science Engineering, Sungkyunkwan University) ;
  • Lee, H.S. (Department of Material science and Metallurgy, Kyongpook University)
  • 발행 : 2008.11.06

초록

In this work, ZnO films doped with different contents of Indium (0.1at.%, 0.3at.%, 0.6at.%, respectively) were deposited on Si (111) substrate that has 1~20 $\Omega$cm by pulsed laser deposition (PLD) at $600^{\circ}C$ for 30min. The thickness of the films are about 250 nm. The structural, optical and electrical properties of the films were investigated using X-ray Diffraction (XRD), Atomic force microscope (AFM), Photoluminescence (PL) and Hall measurement. It has been found that RMS of the films is decreased and grain size is increased with increasing the contents of doped Indium. The results of the Photoluminescence properties were indicated that the films have UV emission about 380nm and shows a little red shitf with increasing contents of doped indium. The result of the Hall measurement shows that the concentration and resisitivity in doped ZnO are as changing as one order, respectively ${\sim}10^{18}/cm^2$, ${\sim}10^{-2}cm{\Omega}cm$.

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