한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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- Pages.59-60
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- 2008
ZnO 나노로드 배열에 의한 GaN기반 광다이오드의 광추출율 향상
Improved Light Output of GaN-Based Light-Emitting Diodes with ZnO Nanorod Arrays
- Lee, Sam-Dong (Kumoh National Institute of Technology, Samsung Advanced Institute of Technology) ;
- Kim, Kyoung-Kook (Kumoh National Institute of Technology, Samsung Advanced Institute of Technology) ;
- Park, Jae-Chul (Kumoh National Institute of Technology, Samsung Advanced Institute of Technology) ;
- Kim, Sang-Woo (Kumoh National Institute of Technology, Samsung Advanced Institute of Technology)
- 발행 : 2008.11.06
초록
GaN-based light-emitting diodes (LEDs) with ZnO nanorod arrays on a planar indium tin oxide (ITO) transparent electrode were demonstrated. ZnO nanorods were grown into aqueous solution at low temperature of