측온 저항체의 Pt 박막 특성 연구

Study on Pt thin film property of Resistance Temperature Detect

  • 박정호 (고려대학교 공과대학 디스플레이 및 나노시스템 연구실) ;
  • 지미정 (요업기술원 전자부품소재본부 전자소재팀) ;
  • 최병현 (요업기술원 전자부품소재본부 전자소재팀) ;
  • 이정민 (고려대학교 공과대학 디스플레이 및 나노시스템 연구실) ;
  • 주병권 (고려대학교 공과대학 디스플레이 및 나노시스템 연구실)
  • Park, Jung-Ho (Display and Nanosystem Lab., College of Engineering, Korea University) ;
  • Ji, Mi-Jung (Korea Institute of Ceramic Eng. & Tech. Electronic Materials Lab) ;
  • Choi, Byung-Heon (Korea Institute of Ceramic Eng. & Tech. Electronic Materials Lab) ;
  • Lee, Jung-Min (Display and Nanosystem Lab., College of Engineering, Korea University) ;
  • Ju, Byeong-Kwon (Display and Nanosystem Lab., College of Engineering, Korea University)
  • 발행 : 2008.11.06

초록

Platinum Thin films were deposited on $Al_2O_3$ by Rf magnetic Sputtering. The physical and electrical characteristics of these films were analyzed under various deposition conditions(Ar gas pressure, input power, substrate temperature.) and annealing condition. The deposition rate was increased with increasing the input power but not increased linear. In the other factor, The Pt thin films property was associated with resistance. so lower resistance had more and more good Pt thin films condition. For the purpose of this study, we will get the best Pt thin film characteristics.

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