한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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- Pages.7-8
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- 2008
Tunnel Barrier Engineering (TBE)를 통한 $HfO_2$ Charge Trap Flash (CTF) Memory의 Erasing 특성 향상
Erasing Characteristics Improvement in $HfO_2$ Charge Trap Flash (CTF) through Tunnel Barrier Engineering (TBE)
- 김관수 (광운대학교 전자재료공학과) ;
- 정명호 (광운대학교 전자재료공학과) ;
- 박군호 (광운대학교 전자재료공학과) ;
- 정종완 (세종대학교 나노신소재공학부) ;
- 정홍배 (광운대학교 전자재료공학과) ;
- 조원주 (광운대학교 전자재료공학과)
- Kim, Kwan-Su (Department of Electronic materials engineering, Kwangwoon Univ.) ;
- Jung, Myung-Ho (Department of Electronic materials engineering, Kwangwoon Univ.) ;
- Park, Goon-Ho (Department of Electronic materials engineering, Kwangwoon Univ.) ;
- Jung, Jong-Wan (Department of Nano Science and Technology, Sejong Univ.) ;
- Chung, Hong-Bay (Department of Electronic materials engineering, Kwangwoon Univ.) ;
- Cho, Won-Ju (Department of Electronic materials engineering, Kwangwoon Univ.)
- 발행 : 2008.11.06
초록
The memory characteristics of charge trap flash (CTF) with