Electrical Resistance of Mo-doped $VO_2$ Films Coated on Graphite Conductive Plates by a Sol-gel Method

몰리브덴이 첨가된 이산화바나듐으로 표면처리한 탄소계 전도성판의 전기저항특성

  • 최원규 (한양대학교 대학원 기계공학과) ;
  • 정혜미 (한양대학교 기계공학과) ;
  • 이종현 (현대자동차 환경기술연구소) ;
  • 임세준 (현대자동차 환경기술연구소) ;
  • 엄석기 (한양대학교 기계공학과)
  • Published : 2008.11.05

Abstract

Vanadium pentoxide ($V_2O_5$) powder was prepared and mixed with Molybdenum Oxides ($MoM_3$) to form Mo-doped and -undoped $VO_2$ films by a sol-gel method on graphite conductive substrates. X-Ray diffraction (XRD) and scanning electron microscopy (SEM) was used to investigate the chemical compositions and microstructures of the Mo-doped and -undoped $VO_2$ films. The variation of electrical resistance was measured as a function of temperature and stoichiometric composition between vanadium and molybdenum. In this study, it was found that Mo-doped and -undoped $VO_2$ shows the typical negative temperature coefficient (NTC) behavior. As the amount of the molybdenum increases, the electrical resistance of Modoped $VO_2$ film gets reduced under the transition temperature and a linear decrease in the transition temperature is observed. From these experimental results, we can conclude that the electrical resistance behavior with temperature change of $VO_2$ films can be utilized as a self-heating source with the electrical current flowing through the graphite substrate.

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