한국표면공학회:학술대회논문집 (Proceedings of the Korean Institute of Surface Engineering Conference)

한국표면공학회 (The Korean Institute of Surface Engineering)
권호 표지

Plasma Enhanced CVD 법으로 증착한 BON박막과 Si-DLC 박막의 산화

Oxidation of BON and Si-DLC Thin Films deposited by Plasma Enhanced CVD method

  • 김찬우 (성균관대학교 신소재공학과) ;
  • 홍리석 (성균관대학교 신소재공학과) ;
  • 이동복 (성균관대학교 신소재공학과)
  • 발행 : 2007.04.05
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초록

Amorphous BON and Si-DLC thin films were synthesized by the RF plasma enhanced CVD method, and their oxidation behavior was studied up to $500^{\circ}C$ in air. The oxidation of both films was accompanied by evaporation of volatile species. The oxidation of BON film was preceded by nitrogen escape from the film, and oxygen penetration into the film. The oxidation of Si-DLC film was preceded by carbon escape probably as CO or $CO_2$from the film, and oxygen penetration into the film. The inwardly transported oxygen simply stayed in the oxidized BON and Si-DLC thin films.

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