한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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- Pages.333-334
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- 2007
AlN 완충층을 이용한 다결정 3C-SiC 박막의 결정성장
Crystal growth of polyctystalline 3C-SiC thin films on AlN buffer layer
- Kim, Kang-San (Univ. of Ulsan) ;
- Chung, Gwiy-Sang (Univ. of Ulsan)
- 발행 : 2007.06.21
초록
This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiOz and AlN substrates, respectively. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was