Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.06a
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- Pages.156-157
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- 2007
Phase-Change Properties of the Sb-doped $Ge_1Se_1Te_2$ thin films application for Phase-Change Random Access Memory
상변화 메모리 응용을 위한 Sb을 첨가한 $Ge_1Se_1Te_2$ 박막의 상변화 특성
- Nam, Ki-Hyeon (Kwangwoon Univ.) ;
- Choi, Hyuk (Kwangwoon Univ.) ;
- Ju, Long-Yun (Kwangwoon Univ.) ;
- Chung, Hong-Bay (Kwangwoon Univ.)
- Published : 2007.06.21
Abstract
For tens of years many advantages of Phase-Change Random Access Memory(PRAM) were introduced. Although the performance improved gradually, there are some portions which must be improved. So, we studied new constitution of