Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.06a
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- Pages.78-78
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- 2007
Optimization of Electrolytes on Cn ECMP Process
Cu ECMP 공정에 사용디는 전해액의 최적화
- Kwon, Tae-Young (Division of Materials and Chemical Engineering, Hanyang University) ;
- Kim, In-Kwon (Division of Materials and Chemical Engineering, Hanyang University) ;
- Cho, Byung-Gwun (Department of Bio-nano Technology, Hanyang University.) ;
- Park, Jin-Goo (Division of Materials and Chemical Engineering, Hanyang University)
- Published : 2007.06.21
Abstract
In semiconductor devices, Cu has been used for the formation of multilevel metal interconnects by the damascene technique. Also lower dielectric constant materials is needed for the below 65 nm technology node. However, the low-k materials has porous structure and they can be easily damaged by high down pressure during conventional CMP. Also, Cu surface are vulnerable to have surface scratches by abrasive particles in CMP slurry. In order to overcome these technical difficulties in CMP, electro-chemical mechanical planarization (ECMP) has been introduced. ECMP uses abrasive free electrolyte, soft pad and low down-force. Especially, electrolyte is an important process factor in ECMP. The purpose of this study was to characterize KOH and