한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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- Pages.70-71
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- 2007
C-V, SHG를 이용한 pentacene FFT의 전기적 특성 연구
Study of electric properties of pentacene field effect transistor using C- V and SHG measurements
- 임은주 ;
- ;
- ;
- Lim, Eun-Ju (Tokyo Institute of Technology) ;
- Takaaki, Manaka (Tokyo Institute of Technology) ;
- Tamura, Ryosuke (Tokyo Institute of Technology) ;
- Iwamoto, Mitsumasa (Tokyo Institute of Technology)
- 발행 : 2007.06.21
초록
Analyzing pentacene field effect transistors (FETs) with Au source and drain electrodes as Maxwell-Wagner effect elements, electron and hole injection from the Au electrodes into the FET channel were examined using current-voltage (I-V), capacitance-voltage (C-V) and optical second harmonic generation (SHG) measurements. Based on these results, a mechanism of the hole and electron injection into pentacene from the Au electrodes and subsequently recombination mechanism with light-emitting in the pentacene layer are discussed, with taking into account the presence of trapped charges.