한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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- Pages.7-8
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- 2007
Ultrathin-Body SOI MOSFETs에서 면방향에 따른 정공의 이동도 증가
Hole Mobility Enhancement in (100)- and (110)-surfaces of Ultrathin-Body Silicon-on-Insulator Metal-Oxide-Semiconductors
- 김관수 (광운대학교 전자재료공학과) ;
- 구상모 (광운대학교 전자재료공학과) ;
- 정홍배 (광운대학교 전자재료공학과) ;
- 정종완 (세종대학교 나노신소재공학부) ;
- 조원주 (광운대학교 전자재료공학과)
- Kim, Kwan-Su (Department of Electronic materials engineering, Kwangwoon Univ) ;
- Koo, Sang-Mo (Department of Electronic materials engineering, Kwangwoon Univ) ;
- Chung, Hong-Bay (Department of Electronic materials engineering, Kwangwoon Univ) ;
- Jung, Jong-Wan (Dept. of Nano-Sci. & Tech, Sejong Univ.) ;
- Cho, Won-Ju (Department of Electronic materials engineering, Kwangwoon Univ)
- 발행 : 2007.06.21
초록
We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness (