Positive Type Photoresist for Patterning of Interdielectric Layer of TFT Array

  • Lee, Hyo-Jung (Dept. of Polymer Science, Kyung pook National University) ;
  • Kim, Hyo-Jin (Dept. of Polymer Science, Kyung pook National University) ;
  • Kim, Soon-Hak (Dept. of Polymer Science, Kyung pook National University) ;
  • Park, Lee-Soon (Dept. of Polymer Science, Mobile Display Research Center, Kyung pook National University) ;
  • Lee, Yun-Su (Mobile Display Research Center, Kyung pook National University) ;
  • Song, Gab-Deuk (Mobile Display Research Center, Kyung pook National University)
  • 발행 : 2007.08.27

초록

Synthesis of two photoactive compounds containing core imide moiety was carried out for an application to interdielectric layer in TFTLCD array. An aqueous alkaline developable polymer matrix was synthesized by free radical copolymerization. A positive photoresist formulation was developed utilizing synthesized UV monomers, photoactive compound, binder polymer, sulfactant and alkali developable polymer matrix. It was found that via-holes with good resolution, high transmittance and thermal resistance could be obtained by photolithographic process utilizing the new positive interdielectric material with high thermal stability.

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