Joule-heating induced crystallization (JIC) of amorphous silicon films

  • Hong, Won-Eui (Department of Materials Science and Engineering, Hongik University) ;
  • Lee, Joo-Yeol (EnSilTech Corporation) ;
  • Kim, Bo-Kyung (Department of Materials Science and Engineering, Hongik University) ;
  • Ro, Jae-Sang (Department of Materials Science and Engineering, Hongik University, EnSilTech Corporation)
  • Published : 2007.08.27

Abstract

An electric field was applied to a conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced through a solid state transformation within the range of a millisecond. Uniformly distributed grains were obtained due to enormously high heating rate.

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